IRFP N – CHANNEL V – Ω – 14A – TO PowerMESH™ MOSFET s . TYPICAL RDS(on) = Ω s. EXTREMELY HIGH dv/dt CAPABILITY. IRFP 14A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP V. DSS. = V. I. D(cont). = 14 A. R. DS(on). = Ω. G = Gate,. D = Drain,. S = Source,. TAB = Drain. Features l International standard packages.

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Vishay – IRFP, SiHFP – Power MOSFET

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Thread starter Ken1 Start date Feb 28, Ken1 Member Feb 28, If so, can you suggest some part numbers? A bigger switch always puts a bigger Ciss load on the gate. You haven’t said what how you are using the mosfet, so it’s difficult to accurately answer your question.

As Tony points out, there will usually be some other parameter that changes along the way.

You need to know what affect other parameters may have on your circuit. But if increased current capacity is your only goal, there is a big trap you need to look out for. One important fact that everyone need to be aware of when choosing mosfets, datassheet that the current rating has a fine print disclaimer that causes problems if not taken into account.

Tc is case temperature, not ambient. So it will only handle 14 amps continuous if the case is kept at 25C all of the time. Not as easy as it sounds.

Let’s look at a few items from the datasheet. So when carrying 14 amps, it will be dissipating about 78 watts of heat. So, it will only carry 14 amps dwtasheet you can keep the case at 25C while it is pushing out 78 watts of heat. Otherwise you’ll need to resort to cold water or refrigerated cooling.


The sum of the junction to case and the case to sink resistances is 0.

This means that the the junction is. So, at 78 watts, the junction is xatasheet degrees hotter than the case. If the case is at 25C, the junction is at 94C. Lets take that number down to the graph at Figure 4. We need to recalculate everything again based on the new info.

It comes down to the fact that the current rating of most mosfets is a calculated number as to what current will put the junction temperature at it’s failure point when the case is at 25C. Doable in a cryogenics lab, but not irfp540 a practical value for most real world applications. So, if you’re looking for a mosfet to continuously carry 20 amps, you will probably need a mosfet s with current capacity 3 to 10 times 20 amps.

A project I am doing right now needs to switch 60Amps DC. I am using four amp mosfets. Maybe a little overkill but, other than the copper plates that carry the current, there is no heatsink.

IRFP450 Mosfet Question

This is the datasheet I used for this discussion. Ken1 Member Mar 1, I am attempting to repair a Powermax PM power supply unit. The unit is relatively new and hasn’t seen much use. I datashset assuming these are too light for the duty they are trying to perform and would like to try and replace them with heavier Mosfets.

They are mounted on a large aluminum heatsink and the adtasheet also has a cooling fan. My circuit is 15 volts. Misterbenn Active Member Mar 1, I am assuming these are too light for the duty. One of the pair of Pins 11 and 14 are the 2 outputs of the chip.

Pin 11 which the burned resistor connects to has a very low resistance to ground compared to pin There is also a visible crack in the case of the same Mosfet. The unit belongs to a neighbour and he said it just quit working; he doesn’t know if it was running hot before it quit. That’s way too low as this power supply is powered by VAC which is fed through a bridge rectifier, then filtered with an uF V capacitor then fed to urfp450 Mosfets through the SMPS transformer.


Often the input FETs are just the weak link and something else is the real culprit. Electrolytic caps are a prime suspect. Give them a good look, especially those close to the hot heat sink. It seems this “entry level” charger” has very little margin before exceeding the component limits. My rule of thumb is the impedance of each dataeheet, where the ratio of impedances of successive stages should not exceed and ought to be in the 10 range, so that RC dynamic losses don’t dominate and exceed conduction losses.

This is determined by the V-I slope of the driver and RdsOn of the switch.

(PDF) IRFP450 Datasheet download

If the impedance gain or datashest gain is too high, you need more stages of MOSFET buffering to prevent overloading the gate resistors due to Qgs charge switch losses and switch frequency. The battery charge may not have intelligent soft start and overstress the charger hooking up to a dead battery. Take a look at this one. Nice power supply by the way. What are you doing with it? Don’t forget to check the caps.

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